2SB1427 absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -20 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -6 v collector current i c -2 a collector current(pulse) i cp * -3 a collector power dissipation p c 0.5 w junction temperature tj 150 storage temperature t stg -55to+150 * single pulse, pw=10ms electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage bv cbo i c =-50a -20 v collector-emitter breakdown voltage bv ceo i c =-1ma -20 v emitter-base breakdown voltage bv ebo i e =-50a -6 v collector cutoff current i cbo v cb =-16v -0.5 a emitter cutoff current i ebo v eb =-5v -0.5 a dc current transfer ratio v ce(sat) i c =-1a,i b =-500ma -0.5 v collector-emitter saturation voltage h fe v ce =-6v, i c =-0.5a 390 820 transition frequency c ob v ce =-10v, i e =10ma, f=30mhz 90 mhz output capacitance f t v cb =-10v, i e =0a, f=1mhz 30 pf marking marking bje features low saturation voltage, typically v ce(sat) =-0.5v at i c /i b =-1a/-50ma. excellent dc current gain characteristics. product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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